InGaN/GaN quantum wells with low growth temperature GaN cap layers

Journal of Crystal Growth

Volumn 307, Issue 2, 2007, Pages 363-366

  Pendlebury, S T ^a   Parbrook, P J ^a   Mowbray, D J ^a   Wood, D A ^a   Lee, K B ^a  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

A1. Photoluminescence; A3. Metalorganic vapor phase epitaxy; A3. Quantum wells; B1. InGaN

Indexed keywords

DESORPTION; GALLIUM NITRIDE; GROWTH TEMPERATURE; INDIUM; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE;

CAP LAYERS; INDIUM LOSS; INGAN; OPTICAL EFFICIENCY;

SEMICONDUCTOR QUANTUM WELLS;

EID: 34548394562     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2007.07.018     Document Type: Article

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