Surface morphological studies of green InGaN/GaN multi-quantum wells grown by using MOCVD

Materials Chemistry and Physics

Volumn 113, Issue 1, 2009, Pages 192-195

  Kumar, M Senthil ^a   Lee, Y S ^a   Park, J Y ^a   Chung, S J ^a   Hong, C H ^a   Suh, E K ^a  

^a Chonbuk National University   (South Korea)

Author keywords

Atomic force microscopy (AFM); Quantum wells; Surface properties

Indexed keywords

ATOMIC FORCE MICROSCOPY; ATOMIC PHYSICS; ATOMS; CHEMICAL VAPOR DEPOSITION; GALLIUM ALLOYS; GALLIUM NITRIDE; INCLUSIONS; INDIUM; LATTICE MISMATCH; MICROSCOPIC EXAMINATION; ORGANIC CHEMICALS; ORGANIC COMPOUNDS; ORGANOMETALLICS; SCANNING PROBE MICROSCOPY; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM WIRES; SURFACE MORPHOLOGY; SURFACE PROPERTIES; WELLS;

ATOMIC FORCE MICROSCOPY (AFM); ATOMIC FORCES; BRIGHT SPOTS; GAN TEMPLATES; HIGH DENSITIES; HIGH TEMPERATURES; IN SEGREGATIONS; INCLUSION DEFECTS; INDIUM COMPOSITIONS; INDUCED STRAINS; INGAN/GAN; INGAN/GAN MQWS; LARGE LATTICE MISMATCHES; LOW TEMPERATURES; METAL ORGANIC; MORPHOLOGICAL STUDIES; QUANTUM WELLS; THREADING DISLOCATIONS; TRIMETHYL INDIUMS; WELL GROWTHS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 56449129143     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matchemphys.2008.07.068     Document Type: Article

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