An InGaN/GaN single quantum well improved by surface modification of GaN films

Nanotechnology

Volumn 20, Issue 4, 2009, Pages

  Fang, Z L ^a   Kang, J Y ^a   Shen, W Z ^b  

^a XIAMEN UNIVERSITY   (China)

^b SHANGHAI JIAO TONG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECT DENSITY; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT EMISSION; LUMINESCENCE; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR QUANTUM WIRES; STOICHIOMETRY; SURFACE CHEMISTRY; SURFACE TREATMENT;

GAN FILMS; GAN LAYERS; HOMOEPITAXY; IN-SITU; INGAN/GAN; SINGLE QUANTUM WELLS; SURFACE MODIFICATION.; SURFACE MODIFICATIONS; SURFACE PITS; SURFACE SMOOTHNESSES;

SURFACE MORPHOLOGY;

ALLOY; INDIUM; INDIUM GALLIUM NITRIDE; NANOFILM; NANOPARTICLE; SINGLE QUANTUM WELL; UNCLASSIFIED DRUG;

ARTICLE; CHEMISTRY; DENSITY; LUMINESCENCE; MORPHOLOGY; PRIORITY JOURNAL; STOICHIOMETRY; SURFACE PROPERTY;

EID: 58149250342     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/20/4/045401     Document Type: Article

References (30)

1. Orton J W and Foxon C T 1998 Rep. Prog. Phys. 61 1
2. Lester S D, Ludowise M J, Killeen K P, Perez B H, Miller J N and Rosner S D 1998 J. Cryst. Growth 189 786
3. Schmidt M C, Kim K C, Sato H, Fellows N, Masui H, Nakamura S, DenBaars S P and Speck J S 2007 Japan. J. Appl. Phys. 46 L126
4. Nizamoglu S and Demir H V 2007 Nanotechnology 18 405702
5. Chen H S, Yeh D M, Lu C F, Huang C F, Shiao W Y, Huang J J, Yang C C, Liu I S and Su W F 2006 IEEE Photon. Technol. Lett. 18 1430
6. Krames M R et al 2002 Phys. Status Solidi a 192 237
7. Ryu H Y et al 2007 IEEE Photon. Technol. Lett. 19 1717
8. Schmidt M C, Kim K C, Farrell R M, Feezell D F, Cohen D A, Saito M, Fujito K, Speck J S, Denbaars S P and Nakamura S 2007 Japan. J. Appl. Phys. 46 L190
9. Jain S C, Willander M, Narayan J and Van Overstraeten R 2000 J. Appl. Phys. 87 965
10. Soh C B, Chow S Y, Tripathy S and Chua S J 2008 J. Phys.: Condens. Matter 2 0 095210
11. Zhang J C et al 2005 Appl. Phys. Lett. 87 071908
12. Zang K Y, Chua S J, Teng J H, Ang N S S, Yong A M and Chow S Y 2008 Appl. Phys. Lett. 92 243106
13. Zang K Y, Wang Y D, Liu H F and Chua S J 2006 Appl. Phys. Lett. 89 171921
14. Suihkonen S, Svensk O, Lang T, Lipsanen H, Odnoblyudov M A and Bougrov V E 2007 J. Cryst. Growth 298 740
15. Cheng Y C, Wu C M, Chen M K, Yang C C, Feng Z C, Li G A, Yang J R, Rosenauer A and Ma K J 2004 Appl. Phys. Lett. 84 5422
16. Lin H C, Lin R S and Chyi J I 2008 Appl. Phys. Lett. 92 161113
17. Niu N H, Wang H B, Liu J P, Liu N X, Xing Y H, Han J, Deng J and Shen G D 2006 J. Cryst. Growth 286 209
18. Johnson M C, Bourret-Courchesne E D, Wu J, Liliental-Weber Z, Zakharov D N, Jorgenson R J, Ng T B, McCready D E and Williams J R 2004 J. Appl. Phys. 96 1381
19. Florescu D I, Ting S M, Ramer J C, Lee D S, Merai V N, Parkeh A, Lu D, Armour E A and Chernyak L 2003 Appl. Phys. Lett. 83 33
20. Scholz F, Off J, Fehrenbacher E, Gfrorer O and Brockt G 2000 Phys. Status Solidi a 180 315
21. Ting S M et al 2003 J. Appl. Phys. 94 1461
22. Moon Y T, Kim D J, Song K M, Choi C J, Han S H, Seong T Y and Park S J 2001 J. Appl. Phys. 89 6514
23. Fang Z L, Li S P, Li J C, Sun H Z, Wang S J and Kang J Y 2008 Thin Solid Films 516 6344
24. Fang Z L, Kang J Y and Shen W Z 2008 J. Phys. Chem. C 112 17652
25. Koleske D D, Wickenden A E, Henry R L and Twigg M E 2002 J. Cryst. Growth 242 55
26. Fang Z L, Kang J Y, Huang W J, Sun H T, Lu M, Kong J F and Shen W Z 2008 J. Phys. Chem. C 112 4925
27. Fang Z L and Kang J Y 2007 J. Phys. Chem. C 111 7889
28. Neugebauer J and Van de Walle C G 1996 Appl. Phys. Lett. 69 503
29. Moulder J F, Stickle W F, Sobol P E and Bomben K D 1995 Handbook of X-ray Photoelectron Spectroscopy: A Reference Book of Standard Spectra for Identification and Interpretation of XPS Data (Eden Prairie, MN: Perkin-Elmer)
30. Soh C B, Liu W, Teng J H, Chow S Y, Ang S S and Chua S J 2008 Appl. Phys. Lett. 92 261909