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Volumn 6, Issue 3-4, 1999, Pages 435-448

Atomic layer deposition of SiO2 using catalyzed and uncatalyzed self-limiting surface reactions

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0033434176     PISSN: 0218625X     EISSN: None     Source Type: Journal    
DOI: 10.1142/s0218625x99000433     Document Type: Article
Times cited : (53)

References (45)
  • 2
    • 0003552056 scopus 로고    scopus 로고
    • SIA Semiconductor Industry Association, 4300 Stevens Creek Boulevard, San Jose, CA 95129, USA
    • The National Technology Roadmap for Semiconductors, SIA Semiconductor Industry Association, 4300 Stevens Creek Boulevard, San Jose, CA 95129, USA (http://www.sematech.org/public/roadmap /index.htm), 1997.
    • (1997) The National Technology Roadmap for Semiconductors
  • 39
    • 0348067300 scopus 로고    scopus 로고
    • These measurements were performed by Dr. Ofer Sneh at Lucent Technologies, Rm. 2J-201, 9999 Hamilton Blvd., Breinigsville, PA 18031, USA
    • These measurements were performed by Dr. Ofer Sneh at Lucent Technologies, Rm. 2J-201, 9999 Hamilton Blvd., Breinigsville, PA 18031, USA.
  • 43
    • 0346806386 scopus 로고    scopus 로고
    • F. H. V. Cauwelaert, F. Vermoortele and J. B. Uytterhoeven (1971)
    • F. H. V. Cauwelaert, F. Vermoortele and J. B. Uytterhoeven (1971).


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.