Comparison between SiO2 films deposited by atomic layer deposition with SiH2[N(CH3)2]2 and SiH[N(CH3)2]3 precursors

Thin Solid Films

Volumn 515, Issue 4, 2006, Pages 1517-1521

  Kamiyama, Satoshi ^a   Miura, Takayoshi ^a   Nara, Yasuo ^a  

^a SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

Author keywords

Atomic layer deposition; Bis dimethylamino silane; Gate dielectrics; Hf silicate; Tris dimethylamino silane

Indexed keywords

ANNEALING; DIELECTRIC MATERIALS; SECONDARY ION MASS SPECTROMETRY; SILANES;

BIS-DIMETHYLAMINO-SILANE; HF-SILICATE; TRIS-DIMETHYLAMINO-SILANE;

SILICA;

EID: 33750822508     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2006.04.033     Document Type: Article

References (20)

1. Stathis J.H., and DiMaria D.J. International Electron Devices Meeting, IEDM Technical Digest (Dec. 6-9 1998), Electron Devices Society of IEEE, San Francisco 167
2. Yu B., Wang H., Riccobene C., Xiang Q., and Lin M.R. Symposium on VLSI Technology. Digest of Technical Papers, Honolulu (June 13-15 2000) 90
3. Wilk G.D., and Wallace R.W. Appl. Phys. Lett. 74 (1999) 2854
4. Wilk G.D., Wallace R.W., and Anthony J.M. J. Appl. Phys. 87 (2000) 484
5. Kirsch P.D., Kang C.S., Lozano J., Lee J.C., and Ekerdt J.G. J. Appl. Phys. 91 (2002) 4353
6. Tsui B.Y., and Chang H.W. J. Appl. Phys. 93 (2003) 10119
7. Lee M., Lu Z.-H., Ng W.-T., Landeer D., Wu X., and Moisa S. Appl. Phys. Lett. 83 (2003) 2638
8. Kamiyama S., Miura T., Nara Y., and Arikado T. J. Electrochem. Soc. 152 (2005) G750
9. Takahashi R., Sakashita M., Sakai A., Zaima S., and Yasuda Y. Jpn. J. Appl. Phys. 43 (2004) 7821
10. Kamiyama S., Miura T., Nara Y., and Arikado T. Appl. Phys. Lett. 86 (2005) 222904
11. Sneh O., Phelps R.C., Londergan A.R., Winkler J., and Seidel T.E. Thin Solid Films 402 (2002) 248
12. Wilk G.D., Green M.L., Ho M.-Y., Busch B.W., Sorsch T.W., Klemens F.P., Brijs B., van Dover R.B., Kornblit A., Gustafsson T., Garfunkel E., Hillenius S., Monroe D., Kalavade P., and Hergenrother J.M. Symposium on VLSI Technology, Digest of Technical Papers, Honolulu (June 11-13 2002) 88
13. Kim H., Mclntyre P.C., and Saraswat K.C. Appl. Phys. Lett. 82 (2003) 106
14. Kukli K., Ritala M., Sajavaara T., Keinonen J., and Leskela M. Chem. Vap. Depos. 8 (2002) 199
15. Cho M., Jeong D.S., Park J., Park H.B., Lee S.W., Jang G.H., and Jeong J. Appl. Phys. Lett. 85 (2004) 5953
16. Hausmann D.M., Kim E., Becker J., and Gordon G. Chem. Matters 14 (2002) 4350
17. He W., Schuetz S., Solanki R., Belot J., and McAndrew J. Electrochem. Solid-State Lett. 7 (2004) G131
18. Kamiyama S., Miura T., and Nara Y. Appl. Phys. Lett. 87 (2005) 132904
19. Kamiyama S., Miura T., Nara Y., and Arikado T. Electrochem. Solid-State Lett. 8 (2005) G215
20. Rittersma Z.M., Roozeboom F., Verheijen M.A., van Berkun J.G.M., Dao T., Snijders J.H., Vainonen-Ahlgren E., Tois E., Tuominen M., and Haukka S. J. Electrochem. Soc. 151 (2004) C716