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Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 19, Issue 5, 2001, Pages 1788-1795

Characterization of bis(tertiary-butylamino)silane-based low-pressure chemical vapor deposition silicate glass films

(5) Park, Byeongju a Conti, Richard a Economikos, Laertis a Chakravarti, Ashima a Ellenberger, James b

a IBM MICROELECTRONICS (United States)

b Silicon Valley Group (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; COMPOSITION EFFECTS; DEPOSITION; DOPING (ADDITIVES); FILMS; LOW TEMPERATURE OPERATIONS; PHOSPHORUS; PRESSURE EFFECTS; SILICATES; THERMAL EFFECTS;

LOW PRESSURE CHEMICAL VAPOR DEPOSITION (LPCVD);

SILANES;

EID: 0035440721 PISSN: 10711023 EISSN: None Source Type: Journal
DOI: 10.1116/1.1396640 Document Type: Article

Times cited : (7)

References (14)

1
- 0024684034
- A. K. Hochberg and D. L. O'Meara, J. Electrochem. Soc. 136, 1843 (1989).
- (1989) J. Electrochem. Soc. , vol.136 , pp. 1843
- Hochberg, A.K.¹ O'Meara, D.L.²

2
- 0029406770
- J. G. Martin, H. E. O'Neal, M. A. Ring, D. A. Roberts, and A. K. Hochberg, J. Electrochem. Soc. 142, 3873 (1995).
- (1995) J. Electrochem. Soc. , vol.142 , pp. 3873
- Martin, J.G.¹ O'Neal, H.E.² Ring, M.A.³ Roberts, D.A.⁴ Hochberg, A.K.⁵

3
- 0029343107
- R. K. Laxman, A. K. Hochberg, H. Cheng, and D. A. Roberts, Thin Solid Films 263, 117 (1995).
- (1995) Thin Solid Films , vol.263 , pp. 117
- Laxman, R.K.¹ Hochberg, A.K.² Cheng, H.³ Roberts, D.A.⁴

4
- 0027313894
- A. K. Hochberg and D. A. Roberts, Mater. Res. Soc. Symp. Proc. 282, 569 (1993).
- (1993) Mater. Res. Soc. Symp. Proc. , vol.282 , pp. 569
- Hochberg, A.K.¹ Roberts, D.A.²

5
- 0002930672
- R. K. Laxman, A. K. Hochberg, D. A. Roberts, F. D. W. Kaminsky, and H. G. Hockenhull, 1998 VMIC Proceedings, 1998, p. 568.
- (1998) 1998 VMIC Proceedings , pp. 568
- Laxman, R.K.¹ Hochberg, A.K.² Roberts, D.A.³ Kaminsky, F.D.W.⁴ Hockenhull, H.G.⁵

6
- 20244377354
- R. K. Laxman, T. D. Anderson, and J. A. Mestemacher, Solid State Technol. 43, 79 (2000).
- (2000) Solid State Technol. , vol.43 , pp. 79
- Laxman, R.K.¹ Anderson, T.D.² Mestemacher, J.A.³

7
- 0002998652
- L. L. Tedder, J. E. Crowell, K. J. Uram, J. K. Shugrue, and D. Tribula, Appl. Phys. Lett. 62, 699 (1993).
- (1993) Appl. Phys. Lett. , vol.62 , pp. 699
- Tedder, L.L.¹ Crowell, J.E.² Uram, K.J.³ Shugrue, J.K.⁴ Tribula, D.⁵

8
- 84951194645
- P. Eppenga, E. Schuivens, and M. Hendriks, J. Phys. 50, C5 (1989).
- (1989) J. Phys. , vol.50
- Eppenga, P.¹ Schuivens, E.² Hendriks, M.³

9
- 0023451349
- F. S. Becker and S. Rohl, J. Electrochem. Soc. 134, 2923 (1987).
- (1987) J. Electrochem. Soc. , vol.134 , pp. 2923
- Becker, F.S.¹ Rohl, S.²

10
- 0000549108
- F. S. Becker, D. Pawlik, H. Schafer, and G. Staudigl, J. Vac. Sci. Technol. B 4, 732 (1986).
- (1986) J. Vac. Sci. Technol. B , vol.4 , pp. 732
- Becker, F.S.¹ Pawlik, D.² Schafer, H.³ Staudigl, G.⁴

11
- 0020151690
- R. M. Levin and A. C. Adams, J. Electrochem. Soc. 129, 1588 (1982).
- (1982) J. Electrochem. Soc. , vol.129 , pp. 1588
- Levin, R.M.¹ Adams, A.C.²

12
- 0018480470
- A. C. Adams and C. D. Capio, J. Electrochem. Soc. 126, 1042 (1979).
- (1979) J. Electrochem. Soc. , vol.126 , pp. 1042
- Adams, A.C.¹ Capio, C.D.²

13
- 0030108111
- D. A. DeCrosta, J. J. Hackenberg, and J. H. Linn, J. Electrochem. Soc. 143, 1079 (1996).
- (1996) J. Electrochem. Soc. , vol.143 , pp. 1079
- DeCrosta, D.A.¹ Hackenberg, J.J.² Linn, J.H.³

14
- 0029542611
- H. Benson-Woodward, E. Hanson, and S. Moreau, IEEE/SEMI 1995 Advanced Semiconductor Manufacturing Conference Proceedings, 1995, p. 216.
- (1995) IEEE/SEMI 1995 Advanced Semiconductor Manufacturing Conference Proceedings , pp. 216
- Benson-Woodward, H.¹ Hanson, E.² Moreau, S.³

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