Thermodynamic and experimental investigations on the growth of thick aluminum nitride layers by high temperature CVD

Journal of Crystal Growth

Volumn 311, Issue 13, 2009, Pages 3371-3379

  Claudel, A ^a,c   Blanquet, E ^a   Chaussende, D ^b   Audier, M ^b   Pique, D ^c   Pons, M ^a  

^a GRENOBLE INSTITUTE OF TECHNOLOGY   (France)

^b LABORATOIRE DES MATÉRIAUX ET DU GÉNIE PHYSIQUE   (France)

^c ACERDE   (France)

Author keywords

A1. Thermodynamic; A1. X ray diffraction; A3. High temperature chemical vapor deposition, HTCVD; B1. AlN; B1. Sapphire; B1. SiC

Indexed keywords

A1. THERMODYNAMIC; A1. X-RAY DIFFRACTION; A3. HIGH TEMPERATURE CHEMICAL VAPOR DEPOSITION, HTCVD; B1. ALN; B1. SAPPHIRE; B1. SIC;

ALUMINA; ALUMINUM; ALUMINUM NITRIDE; CHEMICAL VAPOR DEPOSITION; CHLORINE; CHLORINE COMPOUNDS; CORUNDUM; CRYSTALLINE MATERIALS; DIFFRACTION; EPITAXIAL FILMS; EPITAXIAL GROWTH; MORPHOLOGY; NITRIDES; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SILICON CARBIDE; SINGLE CRYSTALS; SULFUR COMPOUNDS; SURFACE MORPHOLOGY; THERMODYNAMICS; VAPORS; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

TEMPERATURE;

EID: 66649112732     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.03.053     Document Type: Article

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