Modelling of SiC sublimation growth process: Analyses of macrodefects formation

Materials Science and Engineering: B

Volumn 61-62, Issue , 1999, Pages 82-85

  Chourou, K ^a   Anikin, M ^a   Bluet, J M ^a   Dedulle, J M ^a   Madar, R ^a   Pons, M ^b   Blanquet, E ^b   Bernard, C ^b   Grosse, P ^c   Faure, C ^c   Basset, G ^c   Grange, Y ^c  

^a LABORATOIRE DES MATÉRIAUX ET DU GÉNIE PHYSIQUE   (France)

^b UNIV GRENOBLE ALPES   (France)

^c CEA LETI   (France)

Author keywords

Heat transfer; Macrodefects; Numerical simulation; Sublimation growth

Indexed keywords

COMPUTER SIMULATION; CRYSTAL DEFECTS; CRYSTAL GROWTH; CRYSTALLIZATION; HEAT TRANSFER; MATHEMATICAL MODELS; POWDERS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SUBLIMATION; THERMAL EFFECTS; THERMAL GRADIENTS;

MACRODEFECTS; PHYSICAL VAPOR TRANSPORT (PVT); SUBLIMATION GROWTH;

SILICON CARBIDE;

DEFECT;

EID: 4243603485     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(98)00450-4     Document Type: Article

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