Improvement of AlN crystalline quality with high epitaxial growth rates by hydride vapor phase epitaxy

Journal of Crystal Growth

Volumn 305, Issue 2 SPEC. ISS., 2007, Pages 355-359

  Nagashima, Toru ^a,b   Harada, Manabu ^a   Yanagi, Hiroyuki ^a   Fukuyama, Hiroyuki ^c   Kumagai, Yoshinao ^b   Koukitu, Akinori ^b   Takada, Kazuya ^a  

^a TOKUYAMA CORPORATION   (Japan)

^b TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

^c TOHOKU UNIVERSITY   (Japan)

Author keywords

A1. Crystal structure; A3. Hydride vapor phase epitaxy; B1. Nitrides; B2. Semiconducting aluminum compounds

Indexed keywords

CRYSTAL STRUCTURE; ENERGY GAP; GROWTH RATE; NITRIDES; VAPOR PHASE EPITAXY;

ABSORPTION EDGE; BAND GAP ENERGY; HYDRIDE VAPOR PHASE EPITAXY;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 34347344893     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2007.04.001     Document Type: Article

References (11)

1. Kumagai Y., Yamane T., Miyaji T., Murakami H., Kangawa Y., and Koukitu A. Phys. Stat. Sol. C (2003) 2498
2. Kumagai Y., Yamane T., and Koukitu A. J. Crystal Growth 281 (2005) 62
3. Nagashima T., Harada M., Yanagi H., Kumagai Y., Koukitu A., and Takada K. J. Crystal Growth 300 (2007) 42
4. Amano H., Sawaki N., Akasaki I., and Toyoda Y. Appl. Phys. Lett. 42 (1993) 427
5. Usui A., Sunakawa H., Sakai A., and Yamaguchi A. J. Jpn. Appl. Phys. 36 (1997) L899
6. Nakano K., Imura M., Narita G., Kitano T., Hirose Y., Fujimoto N., Okada N., Kawashima T., Iida K., Balakrishnan K., Tsuda M., Iwaya M., Kamiyama S., Amano H., and Akasaki I. Phys. Stat. Sol. A 203 (2006) 1632
7. Liu Y., Tanabe T., Miyake H., Hiramatsu K., Shibata T., Tanaka M., and Masa Y. Jpn. J. Appl. Phys. 44 (2005) L505
8. Fukuyama H., Kusunoki S., Hakomori A., and Hiraga K. J. Appl. Phys. 100 (2006) 024905
9. Koleske D.D., Wickenden A.E., Henry R.L., Culbertson J.C., and Twigg M.E. J. Crystal Growth 223 (2001) 466
10. Readey D.W., and Kuczynski G.C. J. Am. Ceram. Soc. 49 (1960) 26
11. Nam K.B., Nakarmi M.L., Lin J.Y., and Jiang H.X. Appl. Phys. Lett. 86 (2005) 222108