High-speed epitaxial growth of AlN above 1200 {ring operator} C by hydride vapor phase epitaxy

Journal of Crystal Growth

Volumn 300, Issue 1, 2007, Pages 42-44

  Nagashima, Toru ^a,b   Harada, Manabu ^a   Yanagi, Hiroyuki ^a   Kumagai, Yoshinao ^b   Koukitu, Akinori ^b   Takada, Kazuya ^a  

^a TOKUYAMA CORPORATION   (Japan)

^b TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

Author keywords

A1. Crystal structure; A3. Hydride vapor phase epitaxy; B1. Nitrides; B2. Semiconducting aluminum compounds

Indexed keywords

CRYSTAL STRUCTURE; HIGH TEMPERATURE EFFECTS; HYDRIDES; QUARTZ; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; THERMODYNAMICS; VAPOR PHASE EPITAXY;

HIGH-SPEED EPITAXIAL GROWTH; HYDRIDE VAPOR PHASE EPITAXY (HVPE); QUARTZ REACTOR; SAPPHIRE SUBSTRATE;

ALUMINUM COMPOUNDS;

EID: 33847331080     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.10.260     Document Type: Article

References (4)

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3. Kumagai Y., Takemoto K., Kikuchi J., Hasegawa T., Murakami H., and Koukitu A. Phys. Stat. Solidi (b) 243 (2006) 1431
4. Koukitu A., Hama S., Taki T., and Seki H. Jpn. J. Appl. Phys. 37 (1998) 762