Modeling of aluminum nitride growth by halide vapor transport epitaxy method

Journal of Crystal Growth

Volumn 276, Issue 1-2, 2005, Pages 182-193

  Cai, D ^a   Zheng, L L ^a   Zhang, H ^a   Tassev, V L ^b   Bliss, D F ^c  

^a Stony Brook University   (United States)

^b SOLID STATE SCIENTIFIC CORPORATION   (United States)

^c AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

A1. Halide vapor transport epitaxy reactor; A1. Mass transfer; A1.Computer simulation; A3.Chemical vapor deposition process; B2. Semiconducting aluminum nitride

Indexed keywords

AMMONIA; BOUNDARY CONDITIONS; CHEMICAL VAPOR DEPOSITION; COMPUTER SIMULATION; EPITAXIAL GROWTH; MASS TRANSFER; SURFACE CHEMISTRY; TEMPERATURE DISTRIBUTION; VAPORS;

ANHYDROUS AMMONIA; CHEMICAL VAPOR DEPOSITION PROCESS; HALIDE VAPOR TRANSPORT EPITAXY REACTOR; SEMICONDUCTING ALUMINUM NITRIDE;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 20344397141     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.11.339     Document Type: Article

References (28)

1. D.F. Bliss, V.L. Tassev, D. Weyburne, and J.S. Bailey J. Crystal Growth 250 2003 1
2. G.Y. Meng, S. Xie, and D.K. Peng Thin Solid Films 334 1998 145
3. L.J. Schowalter, Y. Shusterman, R. Wang, I. Bhat, G. Arunmozhi, and G.A. Slack Appl. Phys. Lett. 76 8 2000 985
4. L.J. Schowalter, J.C. Rojo, G.A. Slack, Y. Shusterman, R. Wang, I. Bhat, and G. Arunmozhi J. Crystal Growth 211 2000 78
5. Y. Fujii, S. Yoshida, S. Misawa, S. Maekawa, and T. Sakudo Appl. Phys. Lett. 31 1977 815
6. P.M. Dryburgh J. Crystal Growth 125 1992 65
7. W.M. Yim, E.J. Stofko, P.J. Zanzucch, I. Pankove, M. Ettenber, and S.L. Gilbert J. Appl. Phys. 44 1973 292
8. H. Komiyama, and O. Osawa Jpn. J. Appl. Phys. 24 1985 795
9. G.Y. Meng, N. Azema, B. Cros, J. Durand, and L. Cot J. Crystal Growth 129 1993 610
10. B. Wu, R. Ma, H. Zhang, M. Dudley, R. Schlesser, and Z. Sitar J. Crystal Growth 256 2003 326
11. C.M. Balkas, Z. Sitar, T. Zheleva, L. Bergman, R. Nemanich, and R.F. Davis J. Crystal Growth 179 1997 363
12. M.J. Cook, P.K. Wu, N. Patibandia, W.B. Hillig, and J.B. Hudson Mat. Res. Soc. Symp. Proc. 335 1994 101
13. I. Ivanov, L. Hultman, K. Jarrendahl, P. Martensson, J.E. Sundgren, B. Hjorvarsson, and J.E. Greene J. Appl. Phys. 78 9 1995 5721
14. W.T. Lin, L.C. Meng, G.J. Chen, and H.S. Liu Appl. Phys. Lett. 66 16 1995 2066
15. P.K. Kuo, G.W. Auner, and Z.L. Wu Thin Solid Films 253 1994 223
16. K. Kaya, Y. Kanno, H. Takahashi, Y. Shibita, and T. Hirai Jpn. J. Appl. Phys. 35 1996 2782
17. W.Y. Lee, W.J. Lackey, and P.K. Agrawal J. Am. Ceram. Soc. 74 8 1991 1821
18. T. Goto, J. Tsuneyoshi, K. Kaya, and T. Hirai J. Mat. Sci. 27 1992 247
19. B. Aspar, R.R. Clemente, A. Figueras, B. Armas, and C. Combescure J. Crystal Growth 129 1993 56
20. A. Dollet, Y. Casaux, M. Matecki, and R.R. Clemente Thin Solid Films 406 1-2 2002 118
21. S.A. Safvi, N.R. Perkins, M.N. Horton, R. Matyi, and T.F. Kuech J. Crystal Growth 182 1997 233
22. A. Dollet, Y. Casaux, G. Chaix, and C. Dupuy Thin Solid Films 406 1-2 2002 1
23. G. Attolini, S. Carra, F.D. Muzio, R. Fornari, M. Masi, and C. Pelosi Mat. Chem. Phys. 66 2000 213
24. E. Aujol, J. Napierala, A. Trassoudaine, E.G. Lafon, and R. Cadoret J. Crystal Growth 222 2001 538
25. A.H. McDaniel, and M.D. Allendorf J. Phys. Chem. A 102 40 1998 7804
26. CFD Research Corporation, CFDRC User Manual, (2003) 132.
27. W. Aung J. Heat Transfer, Trans. ASME 109 1987 947
28. R.W. Fox, A.T. McDonald, and P.J. Pritchard Introduction to Fluid Mechanics Sixth ed 2004 pp. 311