Growth of thick AlN layer on sapphire (0001) substrate using hydride vapor phase epitaxy

Physica Status Solidi C: Conferences

Volumn 2, Issue 7, 2005, Pages 2062-2065

  Yamane, T ^a,b   Murakami, H ^a   Kangawa, Y ^a   Kumagai, Y ^a   Koukitu, A ^a  

^a TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

^b Soken Industries Co Ltd   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; PARTIAL PRESSURE; SAPPHIRE; VAPOR PHASE EPITAXY; X RAY DIFFRACTION ANALYSIS;

EDGE DISLOCATION DENSITY; FULL WIDTH AT HALF MAXIMUM (FWHM); GROWTH RATES; HYDRIDE VAPOR PHASE EPITAXY (HVPE);

ALUMINUM NITRIDE;

EID: 27344449431     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200461551     Document Type: Conference Paper

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