High temperature growth of AlN film by LP-HVPE

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 4, Issue 7, 2007, Pages 2252-2255

  Tsujisawa, K ^a   Kishino, S ^a   Liu, Y H ^a   Miyake, H ^a   Hiramatsu, K ^a   Shibata, T ^b   Tanaka, M ^b  

^a MIE UNIVERSITY   (Japan)

^b NGK INSULATORS LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALN FILMS; ATOMIC STEPS; CRYSTAL QUALITIES; HIGH GROWTH RATES; HIGH-TEMPERATURE GROWTH; HYDRIDE VAPOR PHASE EPITAXY; NITRIDE SEMICONDUCTORS; RMS VALUES; STEP-FLOW GROWTH; TEM OBSERVATIONS; X-RAY ROCKING CURVE;

CRYSTAL GROWTH; CRYSTALS; ECOLOGY; ELECTRIC CONDUCTIVITY; EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; NITRIDES; SEMICONDUCTOR GROWTH; SEMICONDUCTOR MATERIALS;

FILM GROWTH;

EID: 49449085270     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200674814     Document Type: Conference Paper

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