Polishing and characterization of thick AlN layers grown on SiC substrates by stress control hydride vapor phase epitaxy

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 3, Issue , 2006, Pages 1448-1452

  Mank, H ^a   Amstatt, B ^a,b   Turover, D ^a   Bellet Amalric, E ^b   Daudin, B ^b   Ivantsov, V ^b   Dmitriev, V ^c   Maslennikov, V ^c  

^a SAVOIE TECHNOLAC   (France)

^b CEA GRENOBLE   (France)

^c TDI Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINIUM NITRIDE (ALN); HYDRIDE VAPOR PHASE EPITAXY; SIC; STRESS CONTROL; 61.10.NZ; 68.37.PS; 68.55.JK; 78.30.FS; 81.15.KK; 81.65.PS;

ATOMIC FORCE MICROSCOPY; DEFECTS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; POLISHING; SILICON CARBIDE; STRESSES; SUBSTRATES; SURFACES; VAPOR PHASE EPITAXY; X RAY DIFFRACTION; EPITAXIAL GROWTH; OPTICAL MICROSCOPY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM COMPOUNDS; SURFACE ROUGHNESS; VAPORS;

ALUMINUM NITRIDE;

EID: 33746323955     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200565151     Document Type: Conference Paper

References (5)

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3. S. Monnoye, D. Turover, and P. Vicente, Silicon Carbide Recent Major Advances, edited by W. J. Choyke, H. Matsunami, and H. Pensl, Springer Advanced Texts in Physics Series (Springer, 2004), pp. 699-708.
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5. S. Strite and H. Morkoç, J. Vac. Sci. Technol. B 10(4), 1237 (1992).