Thick AlN layers grown by HVPE on sapphire substrates

Materials Research Society Symposium Proceedings

Volumn 892, Issue , 2006, Pages 743-748

  Sukhoveev, V ^a   Usikov, A ^a   Kovalenkov, O ^a   Ivantsov, V ^a   Syrkin, A ^a   Dmitriev, V ^a   Collins, C ^b   Wraback, M ^b  

^a Technologies and Devices International Inc   (United States)

^b U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NITRIDE; CRACKS; DISLOCATIONS (CRYSTALS); FILM GROWTH; HIGH ELECTRON MOBILITY TRANSISTORS; SAPPHIRE;

DISLOCATION DENSITY; PYRAMIDAL MORPHOLOGY; SCAN X RAYS; SCREW DISLOCATIONS;

SUPERCONDUCTING FILMS;

EID: 33646407558     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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