Thick AlN layers grown by HVPE

Journal of Crystal Growth

Volumn 281, Issue 1, 2005, Pages 87-92

  Kovalenkov, O ^a   Soukhoveev, V ^a   Ivantsov, V ^a   Usikov, A ^a   Dmitriev, V ^a  

^a Technologies and Devices International Inc   (United States)

Author keywords

A1. Substrates; A3. Hydride vapor phase epitaxy; B1. Nitrides; B2. Dielectric materials

Indexed keywords

DIELECTRIC MATERIALS; FILM GROWTH; SAPPHIRE; SUBSTRATES; THERMAL CONDUCTIVITY OF SOLIDS; THICK FILMS; TRANSPARENCY; VAPOR PHASE EPITAXY;

EPITAXIAL STRUCTURES; GROWTH RATE; HYDRIDE VAPOR PHASE EPITAXY (HVPE); ROCKING CURVES;

ALUMINUM NITRIDE;

EID: 20744447813     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2005.03.054     Document Type: Conference Paper

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