Growth of thin protective AlN layers on sapphire substrates at 1065 °C for hydride vapor phase epitaxy of AlN above 1300 °C

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 5, Issue 6, 2008, Pages 1515-1517

  Tajima, J ^a   Kubota, Y ^a   Togashi, R ^a   Murakami, H ^a   Kumagai, Y ^a   Koukitu, A ^a  

^a TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALN; ALN LAYERS; CONCENTRATION OF; EPITAXIAL ALN; HIGH TEMPERATURE; HYDRIDE VAPOR PHASE EPITAXY; OXYGEN IMPURITY; PROTECTIVE LAYERS; ROCKING CURVES; SAPPHIRE SUBSTRATES; SURFACE PITS;

CRYSTAL GROWTH; NITRIDES; OXYGEN; SAPPHIRE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; VAPOR PHASE EPITAXY; VAPORS; X RAY DIFFRACTION;

SUBSTRATES;

EID: 49449088525     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200778433     Document Type: Conference Paper

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