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Volumn , Issue 1, 2002, Pages 474-478

Properties of AlN layers grown on SiC substrates in wide temperature range by HVPE

(8) Ledyaev, O Yu a Cherenkov, A E a Nikolaev, A E a,b Nikitina, I P a,b Kuznetsov, N I a,b Dunaevski, M S b Titkov, A N b Dmitriev, V A c

a Crystal Growth Research Center (Russian Federation)

b IOFFE INSTITUTE (Russian Federation)

c TDI Inc (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NITRIDE; ATOMIC FORCE MICROSCOPY; BUFFER LAYERS; III-V SEMICONDUCTORS; MORPHOLOGY; NITRIDES; SILICON CARBIDE; SUBSTRATES; SURFACE MORPHOLOGY; WIDE BAND GAP SEMICONDUCTORS; X RAY DIFFRACTION;

ALN EPITAXIAL LAYERS; HIGH-CRYSTALLINE QUALITY; MINIMUM VALUE; ROCKING CURVES; SIC SUBSTRATES; SPECIFIC RESISTIVITIES; TEMPERATURE RANGE; WIDE TEMPERATURE RANGES;

SILICON COMPOUNDS;

EID: 20744441036 PISSN: 16101634 EISSN: None Source Type: Conference Proceeding
DOI: 10.1002/pssc.200390091 Document Type: Conference Paper

Times cited : (16)

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