Growth of thick AIN layers by high temperature CVD (HTCVD)

Materials Science Forum

Volumn 600-603, Issue , 2009, Pages 1269-1272

  Claudel, A ^a,c   Blanquet, E ^a   Chaussende, D ^b   Audier, M ^a   Pique, D ^c   Pons, M ^a  

^a CNRS   (France)

^b LABORATOIRE DES MATÉRIAUX ET DU GÉNIE PHYSIQUE   (France)

^c ACERDE   (France)

Author keywords

AIN; Epitaxial relationship; HTCVD; Thermodynamic; Thin films

Indexed keywords

ALUMINA; ALUMINUM CHLORIDE; ALUMINUM OXIDE; CRYSTALLINE MATERIALS; GROWTH RATE; SUBSTRATES; X RAY DIFFRACTION;

AIN; AIN FILMS; BULK GROWTH; EPITAXIAL RELATIONSHIPS; HIGH GROWTH-RATE; HIGH TEMPERATURE CVD; HIGH-CRYSTALLINE QUALITY; HIGHEST TEMPERATURE; THIN-FILMS; X- RAY DIFFRACTIONS;

SILICON CARBIDE;

EID: 63849299266     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.600-603.1269     Document Type: Conference Paper

References (9)

1. G.A. Slack and T.F. Mc Nelly: Journal of Crystal Growth Vol. 42 (1977) p. 560-563
2. W.M. Yim, E.J. Stofko, P.J. Zanzucchi, J.I. Pankove, M. Ettenberg, S.L. Gilbert: Journal of Applied Physics Vol. 44 (1) (1973) p. 292-296
3. Y. Kumagai, T. Yamane, A. Koukitu: Journal of Crystal Growth Vol. 281 (2005) p. 62-67
4. SGTE, Institut National Polytechnique de Grenoble (LTPCM), Grenoble, France, http://www.sgte.org.
5. FactSage, http://www.factsage.com
6. W.A. Bryant: Journal of Materials Science Vol. 12 (1977) p. 1285-1305
7. Y. Kumagai, T. Yamane, T. Miyaji, H. Murakami, Y. Kangawa, A. Koukitu: Physica Status Solidi (C) Vol. 7 (2003) p. 2498-2501
8. R.B. Jain, Y. Gao, J. Zhang, R.S. Qhaleed Fareed, R. Gaska, J. Li, A. Arjunan, E. Kuokstis, J. Yang, M. Asif Khan: Physica Status Solidi (C) Vol. 3(6) (2006) p. 1491-1494
9. O.Y. Ledyaev, A.E. Cherenkov, A.E. Nikolaev, I.P. Nikitina, N.I. Kuznetsov, M.S. Dunaevski, A.N. Titkov, V.A. Dmitriev: Physica Status Solidi (C) Vol. 0(1) (2002) p. 474-478