Characterization of AlN/SiC Epitaxial Wafers Fabricated by Hydride Vapour Phase Epitaxy

Physica Status Solidi (A) Applied Research

Volumn 188, Issue 1, 2001, Pages 463-466

  Melnik, Yu ^a   Tsvetkov, D ^a   Pechnikov, A ^a   Nikitina, I ^b   Kuznetsov, N ^b   Dmitriev, V ^a  

^a TDI Inc   (United States)

^b Crystal Growth Research Center   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 1942446317     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200111)188:1<463::AID-PSSA463>3.0.CO;2-H     Document Type: Article

References (14)

1. A. SAXLER, P. KUNG, C. J. SUN, E. BIGAN, and M. RAZEGHI, Appl. Phys. Lett. 64, 339 (1993).
2. J. CHAUDHURI, R. THOKALA, J. H. EDGAR, and B. S. SYWE, J. Appl. Phys. 77, 6263 (1995).
3. T. DETCHPROHM, T. KURODA, K. HIRAMATSU, N. SAWAKI, and H. GOTO, Inst. Phys. Conf. Ser. 142, 859 (1996).
4. YU, MELNIK, A. NIKOLAEV, I. NIKITINA, K. VASSILEVSKI, and V. DMITRIEV, Mater. Res. Symp. Proc. 482, 269 (1998).
5. M. K. KELLY, R. P. VAUDO, V. M. PHANSE, L. GORGENS, O. AMBACHER, and M. STUTZMANN, Jpn. J. Appl. Phys. 38 (3A), L217 (1999).
6. A. USUI, Mater. Res. Symp. Proc. 482, 233 (1998).
7. TH. RENNER and Z. ANORD, Allg. Chem. 298, 22 (1959).
8. W. M. YIM, E. J. STOFKO, P. J. ZANZUCCHI, J. I. PANKOVE, M. ETTENBERG, and S. L. GILBERT, J. Appl. Phys. 44, 292 (1973).
9. H. ARNOLD, L. BISTE, and TH. KANFMANN, Krist. Tech. 13, 929 (1978).
10. H. KOMIYAMA and T. OSAWA, Jpn. J. Appl. Phys. 24, L795 (1985).
11. F. BUGGE, A. N. EFIMOV, I. G. PICHUGIN, A. M. TSAREGORODTSEV, and M. A. CHERNOV, Cryst. Res. Technol. 22, 65 (1987).
12. A. V. DOBRYNIN, G. A. NAIDA, and V. A. NOVOSELOV, phys. stat. sol. (a) 104, K47 (1987).
13. YU. V. MELNIK, I. P. NIKITINA, A. E. NIKOLAEV, and V. A. DMITRIEV, Diamond Relat. Mater. 6, 1532 (1997).
14. T. L. TANSLEY and R. J. EGAN, Phys. Rev. B 45, 942 (1991).