High-temperature growth of thick AlN layers on sapphire (0 0 0 1) substrates by solid source halide vapor-phase epitaxy

Journal of Crystal Growth

Volumn 310, Issue 17, 2008, Pages 4016-4019

  Eriguchi, Ken ichi ^a   Hiratsuka, Takako ^a   Murakami, Hisashi ^a   Kumagai, Yoshinao ^a   Koukitu, Akinori ^a  

^a TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

Author keywords

A3. Vapor phase epitaxy; B1. Nitrides; B2. Semiconducting aluminum compounds

Indexed keywords

CATHODOLUMINESCENCE; CONCENTRATION (PROCESS); CORUNDUM; CRYSTAL GROWTH; CRYSTALLINE MATERIALS; ECOLOGY; EPITAXIAL GROWTH; EPITAXIAL LAYERS; HIGH PERFORMANCE LIQUID CHROMATOGRAPHY; LEAKAGE (FLUID); MASS SPECTROMETRY; MOLECULAR BEAM EPITAXY; NONMETALS; OXYGEN; PHASE INTERFACES; SAPPHIRE; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING ALUMINUM COMPOUNDS; SUBSTRATES; SULFATE MINERALS; SULFUR COMPOUNDS; VAPORS;

A3. VAPOR-PHASE EPITAXY; ALN LAYERS; ALN-LAYER GROWN; B1. NITRIDES; B2. SEMICONDUCTING ALUMINUM COMPOUNDS; BAND-EDGE EMISSIONS; CRYSTALLINE QUALITY; H IGH CONCENTRATIONS; HALIDE VAPOR-PHASE EPITAXY; HIGH-TEMPERATURE GROWTH; LOCAL HEATING; ROOM TEMPERATURES; SAPPHIRE SUBSTRATES; SOLID SOURCES;

FULL WIDTH AT HALF MAXIMUM;

EID: 49449093113     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.06.033     Document Type: Article

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