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Volumn 44, Issue 16-19, 2005, Pages

Growth of thick AlN layer by hydride vapor phase epitaxy

Author keywords

AlN; Carrier gas; Growth temperature; HVPE; Hydride vapor phase epitaxy

Indexed keywords

ALUMINUM NITRIDE; ATOMIC FORCE MICROSCOPY; FILM GROWTH; HIGH TEMPERATURE EFFECTS; THICK FILMS; VAPOR PHASE EPITAXY;

EID: 30544445804     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.44.L505     Document Type: Article
Times cited : (39)

References (11)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.