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Volumn 44, Issue 16-19, 2005, Pages
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Growth of thick AlN layer by hydride vapor phase epitaxy
a
MIE UNIVERSITY
(Japan)
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Author keywords
AlN; Carrier gas; Growth temperature; HVPE; Hydride vapor phase epitaxy
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Indexed keywords
ALUMINUM NITRIDE;
ATOMIC FORCE MICROSCOPY;
FILM GROWTH;
HIGH TEMPERATURE EFFECTS;
THICK FILMS;
VAPOR PHASE EPITAXY;
ALN;
CARRIER GAS;
GROWTH TEMPERATURE;
CRYSTAL GROWTH;
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EID: 30544445804
PISSN: 00214922
EISSN: 13474065
Source Type: Journal
DOI: 10.1143/JJAP.44.L505 Document Type: Article |
Times cited : (39)
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References (11)
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