Scalable approach for vertical device integration of epitaxial nanowires

Nano Letters

Volumn 9, Issue 5, 2009, Pages 1830-1834

  Lugstein, A ^a   Steinmair, M ^a   Henkel, C ^a   Bertagnolli, E ^a  

^a VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

AIR-BRIDGE STRUCTURE; AIR-BRIDGES; BOTTOM UP APPROACH; CONVENTIONAL PHOTOLITHOGRAPHY; INDUSTRIAL SCALE; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; NANO DEVICE; SCALABLE APPROACH; SELF ALIGNED PROCESS; SILICON-ON-INSULATOR SUBSTRATES; SIMPLIFIED INTEGRATION; TOPDOWN; VAPOR-LIQUID-SOLID; VERTICAL DEVICE INTEGRATION; VERTICAL INTEGRATION; VERTICAL MOSFETS;

CHARGE COUPLED DEVICES; ELECTRIC WIRE; METALLIC COMPOUNDS; MOS DEVICES; MOSFET DEVICES; NANOWIRES; REACTIVE ION ETCHING; VAPORS;

FIELD EFFECT TRANSISTORS;

EID: 66449112162     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl803776a     Document Type: Article

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