Some aspects of substrate pretreatment for epitaxial Si nanowire growth

Nanotechnology

Volumn 19, Issue 48, 2008, Pages

  Lugstein, A ^a   Hyun, Y J ^a   Steinmair, M ^a   Dielacher, B ^a   Hauer, G ^a   Bertagnolli, E ^a  

^a VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

CATALYSIS; CRYSTAL GROWTH; ELECTRIC WIRE; ELECTRON ENERGY LOSS SPECTROSCOPY; ENERGY DISSIPATION; EPITAXIAL GROWTH; GOLD; GROWTH (MATERIALS); HIGH RESOLUTION ELECTRON MICROSCOPY; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; NANOWIRES; SEMICONDUCTING SILICON COMPOUNDS; SILANES; SILICON;

AU LAYERS; EPITAXIAL SILICONS; GOLD CATALYSTS; GOLD PARTICLES; NANOWIRE GROWTHS; NANOWIRE SYNTHESIS; OXIDE FORMATIONS; PRETREATMENT; SI DIFFUSIONS; SI NANOWIRES; SI SUBSTRATES; SI(111) SUBSTRATES; SILANE PRECURSORS; SOLID GROWTHS; SUBSTRATE PRE TREATMENTS; SURFACE PRE TREATMENTS; TECHNOLOGICAL CONDITIONS; THIN LAYERS; THIN NATIVE OXIDE LAYERS; THIN OXIDE LAYERS;

SUBSTRATES;

GOLD; MOLECULAR LAYER; NANOWIRE; OXIDE; SILICON;

ARTICLE; DIFFUSION; ELECTRON ENERGY LOSS SPECTROSCOPY; NANOANALYSIS; NANOCATALYST; PRIORITY JOURNAL; SYNTHESIS; TRANSMISSION ELECTRON MICROSCOPY;

EID: 58149229409     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/19/48/485606     Document Type: Article

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