Silicon nanowire with programmable conductivity analyzed by scanning Maxwell-stress microscopy

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 21, Issue 2, 2003, Pages 664-669

  Matsukawa, Takashi ^a,b   Kanemaru, Seigo ^a,b   Masahara, Meishoku ^a,b   Nagao, Masayoshi ^a   Tanoue, Hisao ^a   Itoh, Junji ^a,b  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTIVITY; ELECTRIC WIRE; FABRICATION; SILICON;

NANOWIRES;

NANOSTRUCTURED MATERIALS;

EID: 0037274220     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1545737     Document Type: Article

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