Single crystalline PtSi nanowires, PtSi/Si/PtSi nanowire heterostructures, and nanodevices

Nano Letters

Volumn 8, Issue 3, 2008, Pages 913-918

  Lin, Yung Chen ^a   Lu, Kuo Chang ^a   Wu, Wen Wei ^b   Bai, Jingwei ^a   Chen, Lih J ^b   Tu, K N ^a   Huang, Yu ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMICALLY SHARP INTERFACES; CONTROLLED REACTIONS; ELECTRICAL MEASUREMENTS; ENHANCEMENT MODES; EPITAXIAL RELATIONSHIPS; FIELD EFFECTS; GATE LENGTHS; HETEROSTRUCTURES; HIGH BREAKDOWNS; HIGH-RESOLUTION TRANSMISSION ELECTRON MICROSCOPIES; INTRINSIC SILICON NANOWIRES; LOW RESISTIVITIES; NANO-DEVICES; NANOSCALE FIELD-EFFECT TRANSISTORS; NANOWIRE HETEROSTRUCTURES; ON/OFF RATIOS; SI (1 1 1); SI NANOWIRES; SILICON NANOWIRES; SINGLE-CRYSTALLINE; SOURCE AND DRAINS;

CONTACTS (FLUID MECHANICS); ELECTRIC VARIABLES MEASUREMENT; FIELD EFFECT TRANSISTORS; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; NANOSTRUCTURED MATERIALS; NANOWIRES; PLATINUM; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SILICON WAFERS; SINGLE CRYSTALS;

ELECTRIC WIRE;

EID: 55749106827     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl073279r     Document Type: Article

References (36)

1. McEuen, P. L.; Fuhrer, M. S.; Park, H. IEEE Trans. Nanotechnol 2002, 1, 78-85.
2. Avouris, P. Ace Chem. Res. 2002, 35, 1026-1034.
3. Javey, A.; Guo, J.; Wang, Q.; Lundstrom, M.; Dai, H. J. Nature 2003, 424, 654-657.
4. Huang, Y.; Lieber, C. M. Pure Appl. Chem. 2004, 76, 2051-2068.
5. Yang, P. MRS Bull. 2005, 30, 85-91.
6. Wang, Z. L. Adv. Mater. 2007, 19, 889-892.
7. Lu, W.; Lieber, C. M. Nat. Mater. 2007, 6, 841-850.
8. Cui, Y.; Duan, X.; Hu, J.; Lieber, C. M. J. Phys. Chem. B 2000, 104, 5213-5216.
9. Zheng, G.; Lu, W.; Jin, S.; Lieber, C. M. Adv. Mater. 2004, 16, 1890-1893.
10. Huang, Y.; Duan, X.; Cui, Y.; Lauhon, L.; Kim, K.; Lieber, C. M. Science 2001, 294, 1313-1317.
11. Zhong, Z.; Wang, D.; Cui, Y.; Bockrath, M. W.; Lieber, C. M. Science 2003, 302, 1377-1379.
12. Duan, X.; Niu, C.; Sahi, V.; Chen, J.; Parce, J. W.; Empedocles, S.; Goldman, J. Nature 2003, 425, 274-278.
13. Duan, X. MRS Bull. 2007, 32, 134-141.
14. Javey, A.; Nam, S.; Friedman, R. S.; Yan, H.; Lieber, C. M. Nano Lett. 2007, 7, 773-777.
15. Patolsky, F.; Zheng, G.; Hayden, O.; Lakadamyali, M.; Zhuang, X.; Lieber, C. M. Proc. Natl. Acad. Sci. U.S.A. 2004, 101, 14017-14022.
16. Patolsky, F.; Timko, B. P.; Zheng, G.; Lieber, C. M. MRS Bull. 2007, 32, 142-149.
17. Sze, S. M. Physics of Semiconductor Devices; John Wiley & Sons: New York, 1981.
18. Wu, Y.; Xiang, J.; Yang, C.; Lu, W.; Lieber, C. M. Nature 2004, 430, 61-65.
19. Lu, K. C.; Tu, K. N.; Wu, W. W.; Chen, L. J.; Yoo. B. Y.; Myung, N. V. Appl. Phys. Lett. 2007, 90, 253111.
20. Lu, K. C.; Wu, W. W.; Wu, H. W.; Tanner, C. M.; Chang, J. P.; Chen, L. J.; Tu, K. N. Nano Lett. 2007, 7, 2389-2394.
21. Weber, W. M.; Geelhaar, L.; Graham, A. P.; Unger, E.; Duesberg, G. S.; Liebau, M.; Pamler, W.; Cheze, C.; Riechert, H.; Lugli, P.; Kreupl, F. Nano Lett. 2006, 6, 2660-2666.
22. Byon, K.; Tham, D.; Fischer, J. E.; Johnson, A. T. Appl. Phys. Lett. 2005, 87, 193104.
23. Bucher, E.; Schulz, S.; Lux-Steiner, M. C.; Munz, P.; Gubler, U.; Greuter, F. Appl. Phys. A: Mater. Sci. Process. 1986, 40, 11-11.
24. Liu, B.; Wang, Y.; Dilts, S.; Mayer, T. S.; Mohney, S. E. Nano Lett. 2007, 7, 818-824.
25. Morales, A. M.; Lieber, C. M. Science 1998, 279, 208-211.
26. Cui, Y.; Lauhon, L. J.; Gudiksen, M. S.; Wang, J.; Leiber, C. M. Appl. Phys. Lett. 2001, 78, 2214-2216.
27. Hannon, J. B.; Kodambaka, S.; Ross, F. M.; Tromp, R. M. Nature 2006, 440, 69-71.
28. Kawarada, H.; Ishida, M.; Nakanishi, J.; Ohdomari, I.; Horiuchi, S. Philos. Mag. A 1986, 54, 729-741.
29. Kästner, G.; Gösele, U. Philos. Mag. 2004, 84, 3803-3824.
30. Xu, D. X.; Xu, J. P.; McCaffrey, S. R.; Das, G. C.; Aers, L. E. Appl. Phys. Lett. 1996, 68, 3588-3590.
31. Freeouf, J. L. Solid State Commun. 1980, 33, 1059-1061.
32. Chau, R. IEEE Electron Device Lett. 2004, 25, 408-410.
33. Xiang, J.; Lu, W.; Hu, Y.; Wu, Y.; Yan, H.; Lieber, C. M. Nature 2006, 441, 489-493.
34. Mizuno, T.; Sugiyama, N.; Kurobe, A.; Takagi, S. IEEE Trans. Electron Devices 2001, 48, 1612-1618.
35. Zhang, M.; Knoch, J.; Zhao, Q. T.; Breuer, U.; Mantl, S. Solid State Elecron. 2006, 50, 594-600.
36. Knoch, J.; Zhang, M.; Appenzeller, J.; Mantl, S. Appl. Phys. A 2007, 87, 351-357.