Doping and electrical transport in silicon nanowires

Journal of Physical Chemistry B

Volumn 104, Issue 22, 2000, Pages 5215-5216

  Cui, Yi ^a   Duan, Xiangfeng ^a   Hu, Jiangtao ^a   Lieber, Charles M ^a  

^a HARVARD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; ELECTRON TRANSPORT PROPERTIES; PHOSPHORUS; SEMICONDUCTING BORON; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SINGLE CRYSTALS; THERMAL EFFECTS;

COULOMB BLOCKADE; NANOWIRES;

NANOSTRUCTURED MATERIALS;

EID: 0033737136     PISSN: 15206106     EISSN: None     Source Type: Journal    
DOI: 10.1021/jp0009305     Document Type: Article

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29. Crossed SiNW p-n junctions have been formed by directed assembly of p-type (n-type) SiNWs over n-type (p-type) SiNWs. Preliminary transport measurements exhibit rectification in reverse bias and a sharp current onset in forward bias. Simultaneous measurements made on the p-type and n-type SiNWs making up the junction demonstrate that the contacts to these nanowires are ohmic (nonrectifying), and thus that the rectifying behavior is due to the p-n junction between the two SiNWs (Cui, Y.; Lieber, C. M., unpublished results).