Silicon Nanowires: Preparation, Device Fabrication, and

Journal of Physical Chemistry B

Volumn 104, Issue 50, 2000, Pages 11864-11870

  Properties, Transport ^a   Yu, Jae Young ^a   Chung, Sung Wook ^a   Heath, James R ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION; CRYSTAL GROWTH; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY MEASUREMENT; ELECTRIC CONTACTS; ELECTRIC PROPERTIES; ELECTRIC WIRE; ELECTRODES; NANOTECHNOLOGY; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; TRANSPORT PROPERTIES;

CONTACT RESISTANCE; NANOWIRES; VAPOR-LIQUID-SOLID MECHANISM;

SILICON;

EID: 0034511724     PISSN: 15206106     EISSN: None     Source Type: Journal    
DOI: 10.1021/jp002595q     Document Type: Article

References (26)

1. Chung, S.-W.; Yu, J.-Y.; Heath, J. R. Appl. Phys. Lett. 2000, 76, 2068.
2. Wagner, R. S.; Ellis, W. C. Appl. Phys. Lett. 1964, 4, 89.
3. Givargizov, E. I. J. Crys. Growth 1975, 31, 20.
4. Heath, J. R.; LeGoues, F. K. Chem. Phys. Lett. 1993, 208, 263.
5. Holmes, J. D.; Johnston, K. P.; Doty, R. C.; Korgel, B. A. Science 2000, 287, 1471.
6. Trentler, T. J.; Hickman, K. M.; Goel, S. C.; Viano, A. M.; Gibbons, P. C.; Buhro, W. E. Science 1995, 270, 1791.
7. Davydov, D. N.; Haruyama, J.; Routkevitch, D.; Statt, B. W.; Ellis, D.; Moskovits, M.; Xu, J. M. Phys. Rev. B 1998, 57, 13550.
8. Morales, A. M.; Lieber, C. M. Science 1998, 279, 208.
9. Ozaki, N.; Ohno, Y.; Takeda, S. Appl. Phys. Lett. 1998, 73, 3700.
10. Smith, R. L.; Collins, S. D. J. Appl. Phys. 1992, 71, Rl.
11. von Behren, J.; Tsybeskov, L.; Fauchet, P. M. Appl. Phys. Lett. 1996, 66, 1662.
12. Zhou, G. W.; Zhang, Z.; Bai, Z. G.; Feng, S. Q.; Yu, D. P. Appl. ' Phys. Lett. 1998, 73, 677.
13. Zhang, Y. F.; Tang, Y. H.; Wang, N.; Yu, D. P.; Lee, C. S.; Bello, I.; Lee, S. T. Appl. Phys. Lett. 1998, 72, 1835.
14. Yu, D. P.; Bai, Z. G.; Ding, Y.; Hang, Q. L.; Zhang, H. Z.; Wang, J. J.; Zou, Y. H.; Qian, W.; Xiong, G. C.; Zhou, H. T.; Feng, S. Q. Appl. Phys. Lett. 1998, 72, 3458.
15. Wang, N.; Tang, Y. H.; Zhang, Y. F.; Lee, C. S.; Bello, L; Lee, S. T. Chem. Phys. Lett. 1999, 299, 237.
16. Sze, S. M. Physics of Semiconductor Devices, 2nd ed.; Wiley: New York, 1981.
17. Sze, S. M.; Coleman, D. J., Jr.; Loya, A. Solid-State Electron. 1971, 14, 1209.
18. Messiah, A. Quantum Mechanics; Wiley: New York, 1976.
19. Sze, S. M.; Irvin, J. C. Solid-State Electron. 1968, U, 599.
20. Irvin, J. C. Bell Sys. Technol. J. 1962, 41, 387.
21. Bullis, W. M.; Stricter, F. J. J. Appl. Phys. 1968, 39, 314.
22. Kamins, T. L; Nauka, K. Electrochem. Solid-State Lett. 1998, 1, 100.
23. Nauka, K.; Kamins, T. I. J. Electrochem. Soc. 1999, 146, 292.
24. Cui, Y.; Duan, X.; Hu, J.; Lieber, C. M. J. Phys. Chem. B 2000, 104, 5213.
25. Trumbore, F. A. Bell Sys. Technol. J. 1960, 39, 205.
26. Johansson, U.; Zhang, H.; Nyholm, R. J. Electron Spectrosc. Relat. Phenom. 1997, 84, 45.