Silicon-nanowire transistors with intruded nickel-suicide contacts

Nano Letters

Volumn 6, Issue 12, 2006, Pages 2660-2666

  Weber, Walter M ^a,b   Geelhaar, Lutz ^a   Graham, Andrew P ^a   Unger, Eugen ^a   Duesberg, Georg S ^a   Liebau, Maik ^a   Pamler, Werner ^a   Chèze, Caroline ^a   Riechert, Henning ^a   Lugli, Paolo ^b   Kreupl, Franz ^a  

^a QIMONDA DRESDEN GMBH AND CO OHG   (Germany)

^b TECHNICAL UNIVERSITY OF MUNICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CATALYSIS; CRYSTAL GROWTH; CURRENT DENSITY; NANOSTRUCTURED MATERIALS; NICKEL COMPOUNDS; SILICON;

NANOWIRES; NICKEL-SUICIDE; ON/OFF CURRENT RATIOS; SCHOTTKY BARRIER FIELD EFFECT TRANSISTORS;

FIELD EFFECT TRANSISTORS;

EID: 33846389740     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl0613858     Document Type: Article

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