Silicon nanowires: Doping dependent n- and p- channel FET behavior

Materials Research Society Symposium Proceedings

Volumn 832, Issue , 2005, Pages 281-286

  Byon, Kumhyo ^a   Fischer, John E ^a   Adu, Kofi W ^b   Eklund, Peter C ^b  

^a UNIVERSITY OF PENNSYLVANIA   (United States)

^b PENNSYLVANIA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); FIELD EFFECT TRANSISTORS; LASER APPLICATIONS; LITHOGRAPHY; NANOSTRUCTURED MATERIALS; SYNTHESIS (CHEMICAL); VAPORIZATION;

DEVICE STRUCTURE; PULSED LASER VAPORIZATION (PLV); SILICON NANOWIRES; VAPOR DOPING;

SILICON;

EID: 23844454557     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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