Surface chemistry and electrical properties of germanium nanowires

Journal of the American Chemical Society

Volumn 126, Issue 37, 2004, Pages 11602-11611

  Wang, Dunwei ^a   Chang, Ying Lan ^b   Wang, Qian ^a   Cao, Jien ^a   Farmer, Damon B ^c   Gordon, Roy G ^c   Dai, Hongjie ^a  

^a STANFORD UNIVERSITY   (United States)

^b AGILENT LABORATORIES   (United States)

^c HARVARD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; FIELD EFFECT TRANSISTORS; HYSTERESIS; NANOSTRUCTURED MATERIALS; OXIDATION; PASSIVATION; SURFACE CHEMISTRY; VACUUM APPLICATIONS; X RAY PHOTOELECTRON SPECTROSCOPY;

ALKYLAMIDE PRECURSOR; GERMANIUM NANOWIRES; SURFACE EFFECTS;

GERMANIUM;

GERMANIUM; GERMANIUM DIOXIDE; OXIDE; WATER;

ANNEALING; ARTICLE; ELECTROCHEMISTRY; FILM; HIGH TEMPERATURE PROCEDURES; HYSTERESIS; NANOTECHNOLOGY; OXIDATION; SEMICONDUCTOR; SURFACE PROPERTY; SYNTHESIS; VACUUM; VAPOR; X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 4544373599     PISSN: 00027863     EISSN: None     Source Type: Journal    
DOI: 10.1021/ja047435x     Document Type: Article

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