Investigation of self-assembled monolayer resists for hafnium dioxide atomic layer deposition

Chemistry of Materials

Volumn 17, Issue 3, 2005, Pages 536-544

  Chen, Rong ^a   Kim, Hyoungsub ^b   McIntyre, Paul C ^b   Bent, Stacey F ^b  

^a STANFORD UNIVERSITY   (United States)

^b Stanford University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; HAFNIUM COMPOUNDS; HYDROPHOBICITY; INTERFACES (MATERIALS); MONOLAYERS; SILICA;

ATOMIC LAYER DEPOSITION (ALD); DEACTIVATING AGENTS; PRECURSORS; SELF-ASSEMBLED MONOLAYERS (SAM);

SELF ASSEMBLY;

HAFNIUM; HAFNIUM DIOXIDE; SILICON DIOXIDE; UNCLASSIFIED DRUG;

ARTICLE; ARTIFICIAL MEMBRANE; ATOM; ATOMIC FORCE MICROSCOPY; ATOMIC LAYER DEPOSITION; FILM; HYDROPHOBICITY; SELF ASSEMBLED MONOLAYER; SEMICONDUCTOR; SURFACE PROPERTY; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 13444293270     PISSN: 08974756     EISSN: None     Source Type: Journal    
DOI: 10.1021/cm0486666     Document Type: Article

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