Temperature-dependent characterization of AlGaN/GaN HEMTs: Thermal and source/drain resistances

IEEE Transactions on Device and Materials Reliability

Volumn 8, Issue 2, 2008, Pages 255-264

  Menozzi, Roberto ^a   Umana Membreno, Gilberto A ^b   Nener, Brett D ^b   Parish, Giacinta ^b   Sozzi, Giovanna ^a   Faraone, Lorenzo ^b   Mishra, Umesh K ^c  

^a UNIVERSITY OF PARMA   (Italy)

^b UNIVERSITY OF WESTERN AUSTRALIA   (Australia)

^c University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN HEMTS; DRAIN BIAS; INDEPENDENT MEASUREMENTS; MEASUREMENT TECHNIQUES; NUMERICAL SIMULATIONS; SERIES RESISTANCES; SOURCE/DRAIN RESISTANCES; TEMPERATURE DEPENDENTS; THERMAL RESISTANCES;

GALLIUM NITRIDE;

EID: 64249138249     PISSN: 15304388     EISSN: 15304388     Source Type: Journal    
DOI: 10.1109/TDMR.2008.918960     Document Type: Article

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