12 W/mm power density AlGaN/GaN HEMTs on sapphire substrate

Electronics Letters

Volumn 40, Issue 1, 2004, Pages 73-74

  Chini, A ^a   Buttari, D ^a   Coffie, R ^a   Heikman, S ^a   Keller, S ^a   Mishra, U K ^a  

^a University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRIC CURRENT MEASUREMENT; GATES (TRANSISTOR); MILLIMETER WAVE DEVICES; PASSIVATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; VOLTAGE MEASUREMENT;

KNEE VOLTAGE; POWER DENSITIES;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0347130078     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20040017     Document Type: Article

References (5)

1. Mishra, U.K., Parikh, P., and Wu, Y: 'AlGaN/GaN HEMTs - an overview of device operation and applications', Proc. IEEE, 2002, 90, (6), pp. 1022-1031
2. Vetury, R., et al.: The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs', IEEE Trans. Electron Devices, 2001, 48, pp. 560-566
3. Asano, K., et al.: 'Novel high power AlGaAs/GaAs HFET with a field-modulating plate operated at 35 V drain voltage'. IEDM Conf., 1998, pp. 59-62
4. Ando, Y., et al: '10-W/mm AlGaNGaN HFET with a field modulating plate', IEEE Electron Device Lett., 2003, 24, (5), pp. 289-291
5. Chini, A., et al.: '2.1 A/mm current density AlGaN/GaN HEMT', Electron. Lett., 2003, 39, (7), pp. 625-626