RF-enhanced contacts to wide-bandgap devices

IEEE Electron Device Letters

Volumn 28, Issue 1, 2007, Pages 2-4

  Simin, G ^a   Yang, Z J ^a  

^a The Department of Mechanical Engineering   (United States)

Author keywords

Contacts; HEMT; Heterostructure field effect transistor (HFET); Heterostructures; Microwave; Wide bandgap

Indexed keywords

ELECTRIC CONTACTS; ELECTRON GAS; ENERGY GAP; HETEROJUNCTIONS; LEAKAGE CURRENTS; MICROWAVE DEVICES; SEMICONDUCTOR DEVICE MANUFACTURE;

HETEROSTRUCTURE FIELD-EFFECT TRANSISTOR; TWO-DIMENSIONAL ELECTRON-GAS LAYER; WIDE-BANDGAP DEVICES;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 33846020580     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2006.887627     Document Type: Article

References (5)

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