Time-resolved temperature measurement of AlGaN/GaN electronic devices using micro-raman spectroscopy

IEEE Electron Device Letters

Volumn 28, Issue 2, 2007, Pages 86-89

  Kuball, Martin ^a   Riedel, G J ^a   Pomeroy, J W ^a   Sarua, A ^a   Uren, M J ^b   Martin, T ^b   Hilton, K P ^b   Maclean, J O ^b   Wallis, D J ^b  

^a UNIVERSITY OF BRISTOL   (United Kingdom)

^b QINETIQ   (United Kingdom)

Author keywords

AlGaN; Communication; FETs; GaN; HEMTs; Nanosecond; Pulsed; Radar; Raman spectroscopy; Reliability; temperature; Thermography

Indexed keywords

ALUMINUM GALLIUM NITRIDE; GALLIUM NITRIDE; RAMAN SPECTROSCOPY; SAPPHIRE; SILICON CARBIDE; THERMOGRAPHY (TEMPERATURE MEASUREMENT);

HEAT DIFFUSION; MICRO-RAMAN SPECTROSCOPY;

SEMICONDUCTOR DEVICES;

EID: 33847386211     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2006.889215     Document Type: Article

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