Experimental validation of GaN HEMTs thermal management by using photocurrent measurements

IEEE Transactions on Electron Devices

Volumn 53, Issue 2, 2006, Pages 182-188

  Regoliosi, Pietro ^a   Reale, Andrea ^a   Di Carlo, Aldo ^a   Romanini, Paolo ^b   Peroni, Marco ^b   Lanzieri, Claudio ^b   Angelini, Annamaria ^c   Pirola, Marco ^c   Ghione, Giovanni ^c  

^a UNIVERSITY OF ROME TOR VERGATA   (Italy)

^b SELEX SISTEMI INTEGRATI   (Italy)

^c POLITECNICO DI TORINO   (Italy)

Author keywords

AlGaN; GaN; High electron mobility transistors (HEMTs); Photoconductivity; Temperature measurements; Thermal resistance

Indexed keywords

ALUMINUM COMPOUNDS; COMPUTER SIMULATION; FLIP CHIP DEVICES; GALLIUM NITRIDE; HEAT RESISTANCE; MATHEMATICAL MODELS; PHOTOCONDUCTIVITY; PHOTOCURRENTS; TEMPERATURE MEASUREMENT; THERMAL CONDUCTIVITY;

CHANNEL TEMPERATURE; FLIP CHIP BONDING; PHOTOCURRENT MEASUREMENTS; THERMAL CHARACTERIZATION; THERMAL SIMULATIONS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 31844453732     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2005.862247     Document Type: Article

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