Improved thermal performance of AlGaN/GaN HEMTs by an optimized flip-chip design

IEEE Transactions on Electron Devices

Volumn 53, Issue 11, 2006, Pages 2696-2702

  Das, Jo ^a   Oprins, Herman ^a   Ji, Hangfeng ^b   Sarua, Andrei ^b   Ruythooren, Wouter ^a   Derluyn, Joff ^a   Kuball, Martin ^b   Germain, Marianne ^a   Borghs, Gustaaf ^a  

^a IMEC   (Belgium)

^b UNIVERSITY OF BRISTOL   (United Kingdom)

Author keywords

FET; Flip chip; GaN; High electron mobility transistors (HEMT); III nitrides; Micro Raman; Self heating

Indexed keywords

FLIP CHIP DEVICES; GALLIUM NITRIDE; HEAT LOSSES; OHMIC CONTACTS; RAMAN SPECTROSCOPY; SEMICONDUCTING ALUMINUM COMPOUNDS; THERMOGRAPHY (TEMPERATURE MEASUREMENT);

FLIP-CHIP-INTEGRATION; INFRARED THERMOGRAPHY; MICRO-RAMAN SPECTROSCOPY;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 33750580547     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2006.883944     Document Type: Article

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