Nonlinear source resistance in high-voltage microwave alGaN/gaN HFETs

IEEE Transactions on Microwave Theory and Techniques

Volumn 54, Issue 5, 2006, Pages 2061-2066

  Trew, Robert J ^a,b   Liu, Yueying ^b   Bilbro, Griff L ^b,d   Kuang, Weiwei ^b   Vetury, Ramakrishna ^c   Shealy, Jeffrey B ^a,c,e  

^a IEEE

^b North Carolina State University   (United States)

^c RF MICRO DEVICES   (United States)

^d NORTH CAROLINA STATE UNIVERSITY   (United States)

^e HUGHES NETWORK SYSTEMS   (United States)

Author keywords

AlGaN GaN heterostructure field effect transistors (HFETs); GaN; Large signal operation; Nonlinear source resistance

Indexed keywords

HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS; LARGE-SIGNAL OPERATIONS; RF PERFORMANCES;

ENERGY GAP; FIELD EFFECT TRANSISTORS; MICROWAVES; RADIO FREQUENCY AMPLIFIERS;

HETEROJUNCTIONS;

EID: 33646723273     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMTT.2006.873627     Document Type: Article

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