SThM temperature mapping and nonlinear thermal resistance evolution with bias on AlGaN/GaN HEMT devices

IEEE Transactions on Electron Devices

Volumn 54, Issue 3, 2007, Pages 385-390

  Aubry, Raphäel ^a   Jacquet, Jean Claude ^a   Weaver, J ^b   Durand, Olivier ^a   Dobson, P ^c   Mills, G ^c   di Forte Poisson, Marie Antoinette ^a   Cassette, Simone ^a   Delage, Sylvain Laurent ^a  

^a ALCATEL THALES III V LAB   (France)

^b UNIVERSITY OF GLASGOW   (United Kingdom)

^c Kelvin Nanotechnology Ltd   (United Kingdom)

Author keywords

GaN; Heterojunction field effect transistor (HFET); High electron mobility transistor (HEMT); Power semiconductor devices; Semiconductor device modeling; Temperature measurement

Indexed keywords

ALUMINUM GALLIUM NITRIDE; BIAS CURRENTS; GALLIUM NITRIDE; HEAT RESISTANCE; HETEROJUNCTIONS; SEMICONDUCTOR DEVICE MODELS; TEMPERATURE MEASUREMENT;

HETEROJUNCTION FIELD-EFFECT TRANSISTOR; SCANNING THERMAL MICROSCOPY; TEMPERATURE MAPPING;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 33947613046     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2006.890380     Document Type: Article

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