Transient thermal characterization of AlGaN/GaN HEMTs grown on silicon

IEEE Transactions on Electron Devices

Volumn 52, Issue 8, 2005, Pages 1698-1705

  Kuzmík, Jan ^a,b   Bychikhin, Sergey ^a   Neuburger, M ^c   Dadgar, A ^d   Krost, Alois ^d   Kohn, Erhard ^c   Pogany, Dionyz ^a  

^a VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

^b INSTITUTE OF ELECTRICAL ENGINEERING   (Slovakia)

^c UNIVERSITY OF ULM   (Germany)

^d OTTO VON GUERICKE UNIVERSITY   (Germany)

Author keywords

GaN; High electron mobility transistor (HEMT); Optical characterization; Thermal characterization; Thermal resistance

Indexed keywords

GALLIUM NITRIDE; HEAT RESISTANCE; HEAT TRANSFER; INTERFEROMETRY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR GROWTH; SILICON NITRIDE;

OPTICAL CHARACTERIZATION; THERMAL CHARACTERIZATION;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 23344432789     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2005.852172     Document Type: Article

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