Study of impact of access resistance on high-frequency performance of AlGaN/GaN HEMTs by measurements at low temperatures

IEEE Electron Device Letters

Volumn 27, Issue 11, 2006, Pages 877-880

  Nidhi, ^a   Palacios, Tomás ^a   Chakraborty, Arpan ^a   Keller, Stacia ^a   Mishra, Umesh K ^a  

^a Santa Barbara   (United States)

Author keywords

Access resistance; Gallium nitride; High electron mobility transistor (HEMT); High frequency performance; Low temperature measurements

Indexed keywords

LOW TEMPERATURE EFFECTS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; TEMPERATURE MEASUREMENT;

ACCESS RESISTANCE; HIGH-FREQUENCY; LOW TEMPERATURE MEASUREMENTS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 33750505886     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2006.884720     Document Type: Article

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