Method for measuring source resistance Rs in saturation region of GaN HEMT device over bias conditions (Vgs, Vds)

Electronics Letters

Volumn 40, Issue 5, 2004, Pages 344-346

  Oxley, C H ^a  

^a DE MONTFORT UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; ELECTRON GAS; EQUIVALENT CIRCUITS; EXTRAPOLATION; GATES (TRANSISTOR); LEAKAGE CURRENTS; SCATTERING PARAMETERS; SEMICONDUCTING GALLIUM COMPOUNDS; SILICON CARBIDE; SILICON NITRIDE; TRANSCONDUCTANCE;

CONDUCTION CHANNELS; SHEET RESISTANCE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 1642296149     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20040236     Document Type: Article

References (5)

1. Ren, F., and Zolper, J.C.: 'Wide energy bandgap electronic devices' (World Scientific, London, UK, 2003)
2. Trew, T.J.: 'AlGaN/GaN HFET amplifier performance and limitations', MTTS, CD-ROM, 2002, pp. 1811-1814
3. Dambrine, G., Cappy, A., Heliodore, F., and Playez, E.: 'A new method for determining the FET small-signal equivalent circuit', IEEE MTT-S Int. Microw. Symp. Dig., 1988, 36, (7)
4. Golio, J.M.: 'Microwave MESFETs and HEMTs' (Artech House, 1991)
5. Ardaravicius, L., Matulionis, A., Liberis, J., Kiprijanovic, O., Ramonas, M., Eastman, L.F., Shealy, J.R., and Vertiatchikh, A.: 'Electron drift velocity in AlGaN/GaN channel at high electric fields', Appl. Phys. Lett., 2003, 83, (19), pp. 4038-4040