At-bias extraction of access parasitic resistances in AlGaN/GaN HEMTs: Impact on device linearity and channel electron velocity

IEEE Transactions on Electron Devices

Volumn 53, Issue 12, 2006, Pages 2914-2919

  DiSanto, David W ^a,b,c   Bolognesi, C R ^a,b,d  

^a IEEE   (United States)

^b SIMON FRASER UNIVERSITY   (Canada)

^c AGILENT TECHNOLOGIES   (United States)

^d ETH ZURICH   (Switzerland)

Author keywords

Delay time analysis; Drain resistance; Electron velocity; Gallium nitride; High electron mobility transistor (HEMT); Source resistance

Indexed keywords

DELAY TIME ANALYSIS; DRAIN RESISTANCE; ELECTRON VELOCITY; SOURCE RESISTANCE;

ALUMINUM GALLIUM NITRIDE; ELECTRON VELOCITY ANALYZERS; GALLIUM NITRIDE; THRESHOLD VOLTAGE; TIME DELAY;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 33947251311     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2006.885663     Document Type: Article

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