Selectively Doped High-Power AlGaN/InGaN/GaN MOS-DHFET

IEEE Electron Device Letters

Volumn 28, Issue 3, 2007, Pages 192-194

  Adivarahan, V ^a   Gaevski, M ^a   Koudymov, A ^a   Yang, J ^a   Simin, G ^a   Khan, M Asif ^a  

^a The Department of Mechanical Engineering   (United States)

Author keywords

Double heterostructure field effect transistors; GaN HEMT; GaN HFET; MOS; selective doping

Indexed keywords

EID: 85008066195     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/LED.2007.891386     Document Type: Article

References (8)

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