Transient self-heating effects in multifinger AlGaN/GaN HEMTs with metal airbridges

Solid-State Electronics

Volumn 51, Issue 6, 2007, Pages 969-974

  Kuzmik, J ^a,f   Bychikhin, S ^a   Lossy, R ^b   Wurfl H J ^b   di Forte Poisson, M A ^c   Teyssier, J P ^d   Gaquiere C ^e   Pogany, D ^a  

^a VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

^b LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

^c ALCATEL THALES III V LAB   (France)

^d UNIVERSITY OF LIMOGES   (France)

^e INSTITUT D ELECTRONIQUE   (France)

^f INSTITUTE OF ELECTRICAL ENGINEERING   (Slovakia)

Author keywords

AlGaN GaN HEMT; Selfheating; Thermal characterization

Indexed keywords

HIGH ELECTRON MOBILITY TRANSISTORS; MAPPING; MATHEMATICAL MODELS; SEMICONDUCTING ALUMINUM COMPOUNDS;

SELFHEATING; THERMAL CHARACTERIZATION; THERMAL MODEL; TRANSIENT INTERFEROMETRIC MAPPING (TIM);

THERMOANALYSIS;

EID: 34250764301     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2007.04.001     Document Type: Article

References (16)

1. Gaska R., Osinsky A., Yang J.W., and Shur M.S. Self-heating in high-power AlGaN-GaN HFET's. IEEE Electron Devices Letters 19 3 (1998) 89-91
2. Kuzmik J., Javorka P., Alam A., Marso M., Heuken M., and Kordoš P. Determination of channel temperature in AlGaN/GaN HEMTs grown on sapphire and silicon substrates using DC characterization method. IEEE Transactions on Electron Devices 49 8 (2002) 1496-1498
3. Turin V.O., and Balandin A.A. Performance degradation of GaN field-effect transistors due to thermal boundary resistance at GaN/substrate interface. Electronics Letters 40 1 (2004) 81-83
4. Kuzmik J., Bychikhin S., Neuburger M., Dadgar A., Krost A., Kohn E., et al. Transient thermal characterization of AlGaN/GaN HEMTs grown on silicon. IEEE Transactions on Electronic Devices 52 8 (2005) 1698-1705
5. Zhao Y., Zhu C., Wang S., Tian J.Z., Yang D.J., Chen C.K., et al. Pulsed photothermal reflectance measurement of the thermal conductivity of sputtered aluminium nitride thin films. Journal of Applied Physics 96 8 (2004) 4563-4568
6. Kuball M., Rajasingam S., Sarua A., Uren M.J., Martin T., Hughes B.T., et al. Measurement of temperature distribution in multifinger AlGaN/GaN heterostructure field-effect transistors using micro-Raman spectroscopy. Applied Physics Letters 82 1 (2003) 124-126
7. Sun J., Fatima H., Koudymov A., Chitnis A., Hu X., Wang M., et al. Thermal management of AlGaN-GaN HFETs on sapphire using flip-chip bonding with epoxy underfill. IEEE Electron Devices Letters 24 6 (2003) 375-377
8. Das J., Oprins H., Ji H., Sarua A., Ruythooren W., Derluyn J., et al. Improved thermal performance of AlGaN/GaN HEMTs by an optimized flip-chip design. IEEE Transactions on Electron Devices 53 11 (2006) 2696-2702
9. Kuball M., Riedel G., Pomeroy J.W., Sarua A., Uren M.J., Martin T., et al. Time-resolved temperature measurement of AlGaN/GaN electronic devices using micro-raman spectroscopy. IEEE Electron Devices Letters 28 2 (2007) 86-89
10. Pogany D., Bychikhin S., Fürböck C., Litzenberger M., Gornik E., Groos G., et al. Quantitative internal thermal energy mapping of semiconductor devices under short current stress using backside laser interferometry. IEEE Transations on Electron Devices 49 11 (2002) 2070-2078
11. Pogany D., Bychikhin S., Litzenberger M., Groos G., and Stecher M. Extraction of spatio-temporal distribution of power dissipation in semiconductor devices using nanosecond interferometric mapping technique. Applied Physics Letters 81 15 (2002) 2881-2883
12. th International Symposium on Compound Semiconductors held in Monterey, California, October 2-5, 2000, pp. 351-356.
13. Meneghesso G., Verzellesi G., Pierobon R., Rampazzo F., Chini A., Mishra U.M., et al. Surface-related drain current dispersion effects in AlGaN-GaN HEMTs. IEEE Transactions on Electron Devices 51 10 (2004) 1554-1561
14. Morkoc H. Nitride semiconductors and devices. Springer Series in Materials Science (1999), Springer-Verlag, Berlin Heidelberg New York p. 44
15. Thomas M.E., Andersson S.K., Sova R.M., and Joseph R.I. Frequency and temperature dependence of the refractive index of sapphire. Infrared Physics & Technology 39 (1998) 235-249
16. 1 - xN alloys and thin films. Journal of Applied Physics 97 7 (2005) 073710