A new technique to measure the thermal resistance of LDMOS transistors

IEEE Transactions on Device and Materials Reliability

Volumn 5, Issue 3, 2005, Pages 515-521

  Menozzi, Roberto ^a   Kingswood, Andy C ^b  

^a UNIVERSITY OF PARMA   (Italy)

^b M/A COM   (United States)

Author keywords

LDMOS transistors; Power amplifiers; RF transistors; Thermal resistance

Indexed keywords

AMBIENT TEMPERATURES; LAYOUT OR TEST STRUCTURE; LDMOS TRANSISTORS; RF TRANSISTORS;

ELECTRIC EQUIPMENT; HEAT RESISTANCE; MOS DEVICES; POWER AMPLIFIERS; TEMPERATURE CONTROL;

TRANSISTORS;

EID: 29344437300     PISSN: 15304388     EISSN: 15304388     Source Type: Journal    
DOI: 10.1109/TDMR.2005.853506     Document Type: Article

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