Interfacial structure and electrical properties of ultrathin HfO 2 dielectric films on Si substrates by surface sol-gel method

Journal of Physics D: Applied Physics

Volumn 42, Issue 1, 2009, Pages

  Gong, You Pin ^a   Li, Ai Dong ^a   Qian, Xu ^a   Zhao, Chao ^a   Wu, Di ^a  

^a NANJING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS STRUCTURES; CURRENT CONDUCTION MECHANISMS; ELECTRICAL PROPERTIES; EQUIVALENT OXIDE THICKNESS; FOWLER-NORDHEIM; HF SILICATES; INTERFACIAL LAYERS; INTERFACIAL OXIDE LAYERS; INTERFACIAL STRUCTURES; LEAKAGE CURRENT DENSITIES; POSITIVE VOLTAGES; POST-DEPOSITION ANNEALING; SCHOTTKY; SI SUBSTRATES; SILICON SUBSTRATES; SOL-GEL METHODS;

CHLORINE COMPOUNDS; DIELECTRIC FILMS; ELECTRIC PROPERTIES; GELATION; GELS; HAFNIUM; HAFNIUM COMPOUNDS; OXIDE FILMS; PERSONAL DIGITAL ASSISTANTS; SEMICONDUCTING SILICON COMPOUNDS; SILICATES; SILICON; SOL-GEL PROCESS; SOL-GELS; SOLS; SURFACE ROUGHNESS;

AMORPHOUS FILMS;

EID: 63749086245     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/42/1/015405     Document Type: Article

References (27)

1. Kingon A I, Maria J P and Streiffer S K 2000 Nature 406 1033
2. Robertson J 2006 Rep. Prog. Phys. 69 327
3. Martínez F L, Toledano-Luque M, Gandía J J, Crabe J, Bohne W, Röhrich J, Strub E and Mrtil I 2007 J. Phys. D: Appl. Phys. 40 5256
4. Govindarajan S, Böscke T S, Sivasubramani P, Kirsch P D, Lee B H, Tseng H-H and Jammy R 2007 Appl. Phys. Lett. 91 062906
5. Ribes G, Mitard J, Denais M, Bruyere S, Monsieur F, Parthasarathy C, Vincent E and Ghibaudo G 2005 IEEE Trans. Device Mater. Reliab. 5 5
6. Tang C, Tuttle B and Ramprasad R 2007 Phys. Rev. B 76 073306
7. Adelmann C, Sriramkumar V, Elshocht S V, Lehnen P, Conard T and Gendt S De 2007 Appl. Phys. Lett. 91 162902
8. Chen R, Kim H, McIntyre P C and Bent S F 2005 Chem. Mater. 17 536
9. Maikap S, Lee H Y, Wang T-Y, Tzeng P-J, Wang C C, Lee L S, Liu K C, Yang J-R and Tsai M-J 2007 Semicond. Sci. Technol. 22 884
10. Yang T S et al 2005 Chem. Mater. 17 6713
11. Abermann S, Pozzovivo G, Kuzmik J, Strasser G, Pogany D, Carlin J-F, Grandjean N and Bertagnolli E 2007 Semicond. Sci. Technol. 22 1272
12. Liu X and Li D J 2006 Appl. Surf. Sci. 253 2143
13. Roy A, Dhar A, Bhattacharya D and Ray S K 2008 J. Phys. D: Appl. Phys. 41 095408
14. Conley J F, Ono Y, Tweet D J and Solanki R 2004 Appl. Phys. Lett. 84 398
15. Ratzke M, Wolfframm D, Kappa M, Kouteva-Arguirova S and Reif J 2005 Appl. Surf. Sci. 247 128
16. Aoki Y, Kunitake T and Nakao A 2005 Chem. Mater. 17 450
17. Aoki Y and Kunitake T 2004 Adv. Mater. 16 118
18. Cho M-H, Roh Y S, Whang C N, Jeong K, Nahm S W, Ko D-H, Lee J H, Lee N I and Fujihara K 2002 Appl. Phys. Lett. 81 472
19. Sayan S, Garfunkel E, Nishimura T, Schulte W H, Gustafsson T and Wilk G D 2003 J. Appl. Phys. 94 928
20. Maida O, Fukayama K, Takahashi M, Kobayashi H, Kim Y-B, Kim H-C and Choi D-K 2006 Appl. Phys. Lett. 89 122112
21. Hong J-H, Moon T-H and Myoung J-M 2004 Microelectron. Eng. 75 263
22. Tsai C-T, Chang T-C, Kin K-T, Liu P-T, Yang P-Y, Weng C-F and Huang F-S 2008 J. Appl. Phys. 103 074108
23. Jin H, Oh S K, Cho Y J, Kang H J and Tougaard S 2007 J. Appl. Phys. 102 053709
24. Yang K J and Hu C M 1999 IEEE Trans. Electron Devices 46 1500
25. Puthenkovilakam R, Sawkar M and Chang J P 2005 Appl. Phys. Lett. 86 202902
26. Cheong K Y, Moon J H, Kim H J, Bahng W and Kim N-K 2008 J. Appl. Phys. 103 084113
27. Rosenbaum E and Register L F 1997 IEEE Trans. Electron Devices 44 317