Electronic properties of ultrathin (HfO2)x(SiO 2)1-x dielectrics on Si (100)

Journal of Applied Physics

Volumn 102, Issue 5, 2007, Pages

  Jin, Hua ^a   Oh, Suhk Kun ^b   Cho, Young Joon ^b   Kang, Hee Jae ^b   Tougaard, Sven ^c  

^a HARBIN INSTITUTE OF TECHNOLOGY   (China)

^b Chungbuk National University   (South Korea)

^c UNIVERSITY OF SOUTHERN DENMARK   (Denmark)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION; DIELECTRIC FILMS; ELECTRONIC STRUCTURE; SUBSTITUTION REACTIONS; X RAY PHOTOELECTRON SPECTROSCOPY;

CONDUCTION BAND; DIELECTRIC FUNCTIONS; SILICATE STRUCTURE; VALENCE-BAND STATES;

ULTRATHIN FILMS;

EID: 34548608840     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2776157     Document Type: Article

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