Structural and electrical properties of metal-ferroelectric-insulator- semiconductor structure of Al/SrBi2Ta2O 9/HfO2/Si using HfO2 as buffer layer

Journal of Physics D: Applied Physics

Volumn 41, Issue 9, 2008, Pages

  Roy, A ^a   Dhar, A ^a   Bhattacharya, D ^a   Ray, S K ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

BUFFER LAYERS; FERROELECTRIC MATERIALS; MAGNETRON SPUTTERING; SEMICONDUCTOR MATERIALS; STRONTIUM COMPOUNDS; THICKNESS MEASUREMENT; X RAY DIFFRACTION;

METAL FERROELECTRIC INSULATORS; RETENTION CHARACTERISTICS; SEMICONDUCTOR STRUCTURE;

THIN FILMS;

EID: 42549089552     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/41/9/095408     Document Type: Article

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